Method and Structure for Fabricating Dark-Periphery Mask for the Manufacture of Semicondutor Wafers

ABSTRACT

A method for manufacturing an integrated circuit devices. The method includes providing a substrate, which includes an opaque film overlying the substrate, an overlying negative photoresist layer, a stop layer overlying the negative photoresist layer, and a positive photoresist layer overlying the stop layer. The method includes patterning the positive resist layer to form one or more window openings in the positive photoresist layer. The method also includes removing the exposed stop layer within the one or more window openings to expose a portion of the negative photoresist layer and patterning the exposed portion of the negative photoresist layer. The method includes developing the exposed portion of the negative photoresist layer and removing exposed portions of the opaque layer to expose an underlying portion of the substrate. The method further includes removing any remaining portions of the negative photoresist layer, stop layer, and positive photoresist layer to provide a patterned mask. The patterned mask is used for a manufacture of integrated circuits.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application claims priority to Chinese Patent No. ______ (SMICDocket No. I-02-128), commonly assigned and hereby incorporated byreference for all purposes.

STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSOREDRESEARCH OR DEVELOPMENT

NOT APPLICABLE

REFERENCE TO A “SEQUENCE LISTING,” A TABLE, OR A COMPUTER PROGRAMLISTING APPENDIX SUBMITTED ON A COMPACT DISK.

NOT APPLICABLE

BACKGROUND OF THE INVENTION

The present invention is directed to integrated circuits and theirprocessing for manufacture of semiconductor devices. More particularly,the invention provides a method for manufacturing a photolithographymask for the manufacture of advanced integrated circuits such as dynamicrandom access memory devices, static random access memory devices(SRAMs), application specific integrated circuit devices (ASICs),microprocessors and microcontrollers, Flash memory devices, and others.

Integrated circuits or “ICs” have evolved from a handful ofinterconnected devices fabricated on a single chip of silicon tomillions of devices. Conventional ICs provide performance and complexityfar beyond what was originally imagined. In order to achieveimprovements in complexity and circuit density (i.e., the number ofdevices capable of being packed onto a given chip area), the size of thesmallest device feature, also known as the device “geometry”, has becomesmaller with each generation of ICs. Semiconductor devices are now beingfabricated with features less than a quarter of a micron across.

Increasing circuit density has not only improved the complexity andperformance of ICs but has also provided lower cost parts to theconsumer. An IC fabrication facility can cost hundreds of millions, oreven billions, of U.S. dollars to build. Each fabrication facility willhave a certain throughput of wafers, and each wafer will have a certainnumber of ICs on it. Therefore, by making the individual devices of anIC smaller, more devices may be fabricated on each wafer, thusincreasing the output of the fabrication facility. Making devicessmaller is very challenging, as each process used in IC fabrication hasa limit. That is to say, a given process typically only works down to acertain feature size, and then either the process or the device layoutneeds to be changed.

An example of such a limit is an ability to manufacture the masks thatare used in performing lithography for the manufacture of integratedcircuits. A commonly used mask is called a phase shift mask. Phase shiftmasks have been used to print feature sizes of few microns usinginterference patterns from illumination sources and positivephotoresists. Unfortunately, conventional processes to manufacture phaseshift masks have become difficult to perform in an efficient andaccurate manner. For example, negative photoresists have been employedfor making masks for devices of feature sizes of less than 0.18 microns.Although such negative photoresists perform better than positivephotoresists, processing time is much longer. Often times, thirty tosixty percent of the negative photoresist should be exposed, whichfurther adds to processing time. Additionally, conventional processesseem to be cumbersome and cause quality problems in the masksthemselves. These and other limitations are described throughout thepresent specification and more particularly below.

From the above, it is seen that an improved technique for processingsemiconductor devices is desired.

BRIEF SUMMARY OF THE INVENTION

According to the present invention, techniques for the manufacture ofsemiconductor devices are provided. More particularly, the inventionprovides a method for manufacturing a photolithography mask for themanufacture of advanced integrated circuits such as dynamic randomaccess memory devices, static random access memory devices (SRAMs),application specific integrated circuit devices (ASICs), microprocessorsand microcontrollers, Flash memory devices, and others.

In a specific embodiment, the invention provides a method formanufacturing a mask for integrated circuit devices. The method includesproviding a substrate, e.g., glass plate. The substrate includes anopaque film overlying the substrate, an overlying negative photoresistlayer, a stop layer (e.g., insulating layer) overlying the negativephotoresist layer, and a positive photoresist layer overlying the stoplayer. These layers form a sandwich structure. The method then patternsthe positive resist layer to form one or more window openings in thepositive photoresist layer, while maintaining protection of theunderlying negative photoresist via etch stop layer. Preferably, theexposure time for the positive resist is opened up within apredetermined window. The method removes the exposed stop layer withinthe one or more window openings to expose a portion of the negativephotoresist layer and patterns the exposed portion of the negativephotoresist layer. The method includes a step of developing the exposedportion of the negative photoresist layer and removing exposed portionsof the opaque layer to expose an underlying portion of the substrate.The method includes removing any remaining portions of the negativephotoresist layer, stop layer, and positive photoresist layer to providea patterned mask using a portion of the opaque layer. Alternatively, thepatterned positive photoresist film is removed before patterning thenegative photoresist film.

In an alternative specific embodiment, the invention provides a methodfor manufacturing integrated circuit devices. The method includesproviding a substrate, which includes an opaque film overlying thesubstrate. The system also has an overlying negative photoresist layer,a stop layer overlying the negative photoresist layer, and a positivephotoresist layer overlying the stop layer. The method includespatterning the positive resist layer to form one or more window openingsin the positive photoresist layer. The method also includes removing theexposed stop layer within the one or more window openings to expose aportion of the negative photoresist layer and patterning the exposedportion of the negative photoresist layer. The method includesdeveloping the exposed portion of the negative photoresist layer andremoving exposed portions of the opaque layer to expose an underlyingportion of the substrate. The method further includes removing anyremaining portions of the negative photoresist layer, stop layer, andpositive photoresist layer to provide a patterned mask. The patternedmask is used for a manufacture of integrated circuits. Alternatively,the patterned positive photoresist film is removed before patterning thenegative photoresist film.

In yet an alternative specific embodiment, the invention provides aphoto mask blank structure for integrated circuit device. The photo maskblank structure has a transparent substrate having a surface region andan opaque film overlying the surface region. A negative photoresistmaterial is overlying the surface region. A stop layer is overlying thenegative photoresist material. Preferably, portions of the stop layerand/or portions of the positive photoresist layer prevent anypossibility of the negative photoresist from being exposed and damagedbefore patterning. The structure also has a positive photoresistmaterial overlying the stop layer. Preferably, the structure is for themanufacture of a phase shift mask but can also be for other maskstructures.

Many benefits are achieved by way of the present invention overconventional techniques. For example, the present technique provides aneasy to use process that relies upon conventional technology. In someembodiments, the method provides higher device yields in dies per wafer.Additionally, the method provides a process that is compatible withconventional process technology without substantial modifications toconventional equipment and processes. Preferably, the invention can beapplied to a variety of applications such as memory, ASIC,microprocessor, and other devices. Preferably, the invention provides away to manufacture a half tone phase shift mask using fewer steps, whichresult in a more efficient process. Depending upon the embodiment, oneor more of these benefits may be achieved. These and other benefits willbe described in more throughout the present specification and moreparticularly below.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 8 are simplified cross-sectional view diagramsillustrating a method of fabricating a phase shift mask according to anembodiment of the present invention; and

FIGS. 9 through 17 are simplified cross-sectional view diagramsillustrating an alternative method of fabricating a phase shift maskaccording to an alternative embodiment of the present invention

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, techniques for the manufacture ofsemiconductor devices are provided. More particularly, the inventionprovides a method for manufacturing a photolithography mask for themanufacture of advanced integrated circuits such as dynamic randomaccess memory devices, static random access memory devices (SRAM),application specific integrated circuit devices (ASIC), microprocessorsand microcontrollers, Flash memory devices, and others.

A method for fabricating a mask structure according to an embodiment ofthe present invention is outlined as follows:

1. Provide a substrate, e.g., glass plate;

2. Form an opaque film (e.g., chrome) overlying the substrate;

3. Form a negative photoresist layer overlying the opaque film;

4. Form a stop layer overlying the negative photoresist layer;

5. Form a positive photoresist layer overlying the stop layer;

6. Pattern the positive resist layer to form one or more window openingsin the positive photoresist layer without exposing the negativephotoresist layer that is covered by the positive photoresist;

7. Remove the exposed stop layer within the one or more window openingsto expose a portion of the negative photoresist layer;

8. Pattern the exposed portion of the negative photoresist layer, whichhas covered portions that are free from any damage from precedingprocesses;

9. Develop the exposed portion of the negative photoresist layer;

10. Remove the exposed portions of the opaque layer to expose anunderlying portion of the substrate;

11. Remove any remaining portions of the negative photoresist layer,stop layer, and positive photoresist layer to provide a patterned maskusing a portion of the opaque layer;

12. Use the patterned mask for the manufacture of integrated circuits;and

13. Perform other steps, as desired.

The above sequence of steps provides a method for fabricating aphotolithography mask according to an embodiment of the presentinvention. As shown, such steps include use of both positive andnegative photoresist films. Preferably, covered portions of the negativephotoresist protect such portions of the negative photoresist to form adark periphery mask. Further details of the present invention can befound throughout the present specification and more particularlyaccording to the Figures described below.

FIGS. 1 through 8 are simplified cross-sectional view diagramsillustrating a method of fabricating a phase shift mask according to anembodiment of the present invention. These diagrams are merely anexample, which should not unduly limit the scope of the claims herein.One of ordinary skill in the art would recognize many variations,alternatives, and modifications. As shown, the method provides a quartzsubstrate 100. The quartz substrate includes a chromium film 103overlying the substrate. Other films can also be used. The method formsa negative photoresist layer 105 formed overlying the chromium film. Aninsulating layer 107 and positive photoresist layer 109 are formedoverlying the negative photoresist film. Depending upon the applicationvarious types of materials may be used for the insulating layer 107.Referring to FIG. 2, the method exposes 201 the positive photoresistlayer. As shown, exposed regions 203 will be removed via development asillustrated in FIG. 3. Openings are formed in the photoresist layer fora mask pattern 301 as also illustrated.

The method then etches exposed regions 405 of the insulating filmthrough openings in the photoresist layer, as illustrated by FIG. 4.Preferably, dry etching techniques can be used. As merely an example,such dry etching techniques include, among others, plasma etching,reactive ion etching, etc. Plasma etching selectively removes theinsulating film from the negative photoresist film. Here, the negativephotoresist film acts as an etch stop layer. Alternatively, wet etchingtechniques can also be used. Referring to FIG. 5, the method exposes 501the negative photoresist to form patterns. The patterns are developedand removed 601 as illustrated by FIG. 6. Preferably, the unpatternedportion of the positive photoresist film and/or etch stop layer protectsunexposed regions of the negative photoresist. The method etches 701 thechromium film, which has been exposed, as illustrated by FIG. 7. Etchingoccurs without damaging the quartz substrate. The quartz substrate actsas an etch stop in the etching process of the chromium film. The etchedchromium film is now patterned to form the mask pattern, which will beused in the manufacture of integrated circuits. Referring to FIG. 8, themethod then strips 801 the photoresist films and insulating layer.Stripping often occurs using ashers employing an oxygen bearing plasma,which can be mixed with water. Of course, the particular strippingtechnique depends upon other factors. Depending upon the embodiment,there can be other variations, modifications, and alternatives. Furtherdetails of other methods and structures according to the presentinvention can be found throughout the present specification and moreparticularly below.

A method for fabricating a mask structure according to an embodiment ofthe present invention is outlined as follows:

1. Provide a substrate, e.g., glass plate;

2. Form an opaque film (e.g., chrome) overlying the substrate;

3. Form a negative photoresist layer overlying the opaque film;

4. Form a stop layer overlying the negative photoresist layer,

5. Form a positive photoresist layer overlying the stop layer;

6. Pattern the positive resist layer to form one or more window openingsin the positive photoresist layer;

7. Remove the exposed stop layer within the one or more window openingsto expose a portion of the positive resist layer;

8. Strip the positive resist layer;

9. Pattern the exposed portion of the negative photoresist layer;

10. Develop the exposed portion of the negative photoresist layer;

11. Remove the exposed portions of the opaque layer to expose anunderlying portion of the substrate;

12. Remove any remaining portions of the negative photoresist layer,stop layer, and positive photoresist layer to provide a patterned maskusing a portion of the opaque layer; and

13. Perform other steps, as desired.

The above sequence of steps provides a method for fabricating aphotolithography mask according to an embodiment of the presentinvention. As shown, such steps include use of both positive andnegative photoresist films. Preferably, covered portions of the negativephotoresist protect such portions of the negative photoresist to form adark periphery mask. Further details of the present invention can befound throughout the present specification and more particularlyaccording to the Figures described below.

FIGS. 9 through 17 are simplified cross-sectional view diagramsillustrating a method of fabricating a phase shift mask according to analternative embodiment of the present invention. These diagrams aremerely an example, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize manyvariations, alternatives, and modifications. As shown, the methodprovides a quartz substrate 900. The quartz substrate includes achromium film 901 or other like films overlying the substrate. Themethod forms a negative photoresist layer 903 formed overlying thechromium film. An insulating layer 905 and positive photoresist layer907 are formed overlying the negative photoresist film. Depending uponthe application, various types of material for the insulating layer.Referring to FIG. 10, the method exposes 1101 the positive photoresistlayer. As shown, exposed regions will be removed via development asillustrated in FIG. 11. Openings are formed in the photoresist layer fora mask pattern 1103 as shown in FIG. 11.

The method then etches exposed regions 1105 of the insulating filmthrough openings in the photoresist layer, as illustrated by FIG. 12.Preferably, dry etching techniques can be used. As merely an example,such dry etching techniques include, among others, plasma etching,reactive ion etching, etc. Plasma etching selectively removes theinsulating film from the negative photoresist film. Alternatively, wetetching techniques can also be used. Here, the negative photoresist filmacts as an etch stop layer. The method then removes 1301 the positivephotoresist using a stripping process or the like (See FIG. 13). Asshown, the surface of the patterned layer is free from positivephotoresist material. Referring to FIG. 14, the method exposes 1401 thenegative photoresist to form patterns. Other portions of the negativephotoresist layer have been protected via etch stop layer or the like.The patterns are developed and removed 1501 as illustrated by FIG. 15.The method etches 1601 the chromium film, which has been exposed, asillustrated by FIG. 16. Etching occurs without damaging the quartzsubstrate. The quartz substrate acts as an etch stop in the etchingprocess of the chromium film. The etched chromium film is now patternedto form the mask pattern, which will be used in the manufacture ofintegrated circuits. Referring to FIG. 17, the method then strips 1701the photoresist film and insulating layer. Stripping often occurs usingashers employing an oxygen bearing plasma, which can be mixed withwater. Of course, the particular stripping technique depends upon otherfactors. Depending upon the embodiment, there can be other variations,modifications, and alternatives.

Although the above has been illustrated according to a specificembodiment, there can be other modifications, alternatives, andvariations. For example, boron has been used as an impurity, but otherimpurities can also be used. It is also understood that the examples andembodiments described herein are for illustrative purposes only and thatvarious modifications or changes in light thereof will be suggested topersons skilled in the art and are to be included within the spirit andpurview of this application and scope of the appended claims.

1. A method for manufacturing a mask for integrated circuit devices, themethod comprising: providing a substrate, the substrate including anopaque film overlying the substrate, an overlying negative photoresistlayer, a stop layer overlying the negative photoresist layer, and apositive photoresist layer overlying the stop layer; patterning thepositive resist layer to form one or more window openings in thepositive photoresist layer; removing the exposed stop layer within theone or more window openings to expose a portion of the negativephotoresist layer while other portions of the positive photoresist layerprotect unexposed regions of the negative photoresist layer; patterningthe exposed portion of the negative photoresist layer while protectingthe other portions of the unexposed regions of the negative photoresistlayer; developing the exposed portion of the negative photoresist layer;and removing exposed portions of the opaque layer to expose anunderlying portion of the substrate; and removing any remaining portionsof the negative photoresist layer, stop layer, and positive photoresistlayer to provide a patterned mask.
 2. The method of claim 1 wherein thesubstrate is quartz.
 3. The method of claim 1 wherein the removing theexposed portions of the opaque layer comprises a wet etching process ordry etching process.
 4. The method of claim 1 wherein the exposedportion of the opaque layer has a characteristic length of less than0.72 microns.
 5. The method of claim 1 wherein the stop layer is aninsulating layer.
 6. The method of claim 1 further comprising using themask in a manufacture of a semiconductor integrated circuit.
 7. Themethod of claim 1 wherein the patterning the exposed portion of negativephotoresist comprises selectively scanning a laser beam or an electronbeam onto the exposed portion of the negative photoresist.
 8. The methodof claim 1 wherein the patterning is a raster scan or a vector scan. 9.A method for manufacturing an integrated circuit devices, the methodcomprising: providing a substrate, the substrate including an opaquefilm overlying the substrate, an overlying negative photoresist layer, astop layer overlying the negative photoresist layer, and a positivephotoresist layer overlying the stop layer; patterning the positiveresist layer to form one or more window openings in the positivephotoresist layer, the one or more window openings having a dimension;removing the exposed stop layer within the one or more window openingsto expose a portion of the negative photoresist layer; patterning theexposed portion of the negative photoresist layer; developing theexposed portion of the negative photoresist layer; and removing exposedportions of the opaque layer to expose an underlying portion of thesubstrate; and removing any remaining portions of the negativephotoresist layer, stop layer, and positive photoresist layer to providea patterned mask; and using the patterned mask for a manufacture ofintegrated circuits.
 10. The method of claim 9 wherein the substrate isquartz.
 11. The method of claim 9 wherein the exposed portion of thesubstrate having a width of less than 0.72 microns.
 12. The method ofclaim 9 wherein a portion being covered by the positive photoresist isabout 30 percent of a surface region of the substrate.
 13. The method ofclaim 9 wherein the removing of any remaining portions of the negativephotoresist layer, stop layer, and positive photoresist layer to providea patterned mask are performed separately.
 14. The method of claim 9wherein the stop layer is an etch stop layer.
 15. The method of claim 9wherein the stop layer is a separator between the negative photoresistlayer and the positive photoresist layer.
 16. A photo mask blankstructure for integrated circuit device, the photo mask blank structurecomprising: a transparent substrate having a surface region; an opaquefilm overlying the surface region; a negative photoresist materialoverlying the surface region; a stop layer overlying the negativephotoresist material; and a positive photoresist material overlying thestop layer.
 17. The mask of claim 16 wherein the photo mask blankstructure comprises a package enclosing and sealing the transparentsubstrate, the opaque film, the negative photoresist, the stop layer,and the positive photoresist material from an ambient condition.